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SI3585CDV-T1-GE3 FPGA Integrated Circuit MOSFET N/P-CH 20V 3.9A 6TSOP integrated circuit board

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Country/Region:china
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SI3585CDV-T1-GE3 FPGA Integrated Circuit MOSFET N/P-CH 20V 3.9A 6TSOP integrated circuit board

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Model Number :SI3585CDV-T1-GE3
Payment Terms :D/A, T/T, Western Union
Delivery Time :1-2 work days
Packaging Details :Tape & Reel (TR)
Drain to Source Voltage (Vdss) :20V
Package / Case :SOT-23-6 Thin, TSOT-23-6
Mounting Type :Surface Mount
Packaging :Tape & Reel (TR)
Supplier Device Package :6-TSOP
Vgs(th) (Max) @ Id :1.5V @ 250µA
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We can supply SI3585CDV-T1-GE3, send us a request quote to request SI3585CDV-T1-GE3 pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3585CDV-T1-GE3.The price and lead time for SI3585CDV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part SI3585CDV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
FET Feature: Logic Level Gate
Power - Max: 1.4W, 1.3W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 32 Weeks
FET Type: N and P-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Other Names: SI3585CDV-T1-GE3-ND SI3585CDV-T1-GE3TR
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)

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